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A region having no carriers (depletion layer) is formed at the interface of the pn junction, and a positive potential and a negative charge remain in the depletion layer, and a potential difference is generated. The electrons in the P-type move in the n-type direction under the action of a potential difference (referred to as source shift). Similarly, the holes in the n-type move toward the p-type under the influence of the potential difference. When the drift and the diffusion due to the concentration difference reach equilibrium, the diffusion stops, and the Fermi levels of the p-type and n-type are also consistent. The potential difference at this time is called a built-in potential difference (built-in electric field). The built-in potential difference V is a function of the donor concentration N and the acceptor concentration N to generate a pn junction, and the built-in potential difference of the depletion layer at the interface due to carrier diffusion can be calculated by the current spreading and the source shifting current.